Electrical Characterization

In IC device manufacturing electrical characteristics of layers and films must be well controlled. Conventional contact test methods on monitor wafers, like the 4-point probe method, do no longer meet modern requirements. State of the art IC feature extremely thin junctions, often only a few atomic layers of material. SIC's contactless RsL probe for sheet resistance and leakage to meet the challenge to characterize ultra shallow junctions.For sheet resistance measurement of thicker junctions and metal layers SIC offers four-point probe systems.