Stress Hysteresis in vacuum or gas up to 900C for the study of annealing cycles. Thermal Desorption, Film Shrinkage, Reflectivity, and Resistivity options provide additional insight to causes of material changes with temperature. NEW: Optional wafer rotation offers unique 2D/3D mapping to study wafer deformation as a function of temperature.
Rapid Thermal Mechanical Characterization of novel materials. Simulataneous extraction of stress hysteresis, thermal desorption, film shrinkage and reflectivity data during thermal cycling in vacuum up to 900 degree C. Manually loading system.