VIT(E) Series
Virtual Interface Technology for 3D-IC Metrology: TSV profile (depth, top & bottom CD) , Remaining Silicon Thickness (RST), Copper Nail Height, Bump Height and Cu pillar Height, Edge trim profile.
8108 VITE
New high speed, high accuracy non-contact characterization of thin wafers, through silicon vias (TSV), bumps, MEMS structures and novel materials. SIC 8108 VITE can be employed in the front-end and backend. It provides thickness, TTV, and topography of Si and compound materials, edge trim geometry, multilayer thickness and topography of wafers on tape, on sapphie,or on glass. Measurement of warp of highly warped wafers and measurement of thick films.
